学历：博士研究生毕业
在职信息：在职
所在单位：物理学院
曾获荣誉：
办公地点：长春市前进大街2699号
- [1] Giant tunneling magnetoresistance in van der Waals magnetic tunnel junctions formed by interlayer antiferromagnetic bilayer CoBr2. Phys. Rev. B. 2021,103 :134437
- [2] High-Sensitivity Tunnel Magnetoresistence Sensors Based on Double Indirect and Direct Exchange Coupling Effect. Chin. Phys. Lett.. 2021,38 :128501
- [3] Ferromagnetic barrier induced large enhancement of tunneling magnetoresistance in van der Waals perpendicular magnetic tunnel junctions. Nanoscale. 2021,13 :19993
- [4] Giant tunneling magnetoresistance induced by bias voltage in spin-filter van der Waals magnetic tunnel junctions with an interlayer antiferromagnetic semiconductor barrier. Phys. Rev. B. 2021,104 :144423
- [5] Enhanced magnetic anisotropy and Curie temperature of the NiI2 monolayer by applying strain-a first-principles study. Phys. Chem. Chem. Phys.. 2020,22 :26917
- [6] Ultrahigh tunneling magnetoresistance in van der Waals and lateral magnetic tunnel junctions formed by intrinsic ferromagnets Li0.5CrI3 and CrI3. Appl. Phys. Lett.. 2020,117 :022412
- [7] Interlayer coupling in intrinsically magnetic bilayer ScO2 and NbN2. Appl. Phys. Lett.. 2020,116 :082403
- [8] Interface-induced perpendicular magnetic anisotropy in Co2FeAl/NiFe2O4 superlattice: first-principles study. Phys. Chem. Chem. Phys.. 2020,22 :716
- [9] Four distinct resistive states in van der Waals full magnetic 1T-VSe2/CrI3/1T-VSe2 tunnel junction. Applied Surface Science. 2020,505 :144648
- [10] Prediction of Novel 2D Intrinsic Ferromagnetic Materials with High Curie Temperature and Large Perpendicular Magnetic Anisotropy. J. Phys. Chem. C. 2020,124 :7956-7964