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张明喆
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Education Level:Doctor graduate

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13. 张明喆,揣明艳,氧化铜掺铕室温铁磁半导体材料的制备方法,中华人民共和国国家知识产权局,申请日,2017.09.05,授权公告日,2019.03.19,专利号,ZL 201710809651.9。

Date:2019-03-29 Hits:

Service Invention or Not:yes

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