发布时间：
Low turn-on voltage and highly bright Ag–In–Zn–S quantum dot light-emitting diodes. Bingyan Zhu, Wenyu Ji, * Zongquan Duan, Yang Sheng,* Ting Wang, Qilin Yuan, Han Zhang, Xiaosheng Tang, Hanzhuang Zhang*
发布日期：2019-03-04 点击次数：
论文类型：期刊论文
第一作者：朱炳焱
通讯作者：纪文宇,张汉壮
全部作者：段宗全,盛扬,王婷,袁启霖,张涵,唐孝生
发表时间：2018-03-25
收录刊物：
SCI
是否译文：否
上一条：Influence of Shell Thickness on the Performance of NiO-Based All- Inorganic Quantum Dot Light-Emitting Diodes.Ting Wang, Bingyan Zhu, Shuangpeng Wang, Qilin Yuan, Han Zhang, Zhihui Kang, Rong Wang,* Hanzhuang Zhang, Wenyu Ji*
下一条：Wenyu Ji,* Huaibin Shen, Han Zhang, Zhihui Kang, Hanzhuang Zhang, Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer. Nanoscale 2018, 10, 11103-11109.
