呼咏论文成果 Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

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呼咏
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( 教授 ) 赞
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的个人主页 https://teachers.jlu.edu.cn/Emily/zh_CN/index.htm

教授
主要任职 : 吉林大学机械学院机制系书记
其他任职 : 国际仿生工程学会创始会员，中国仪器仪表学会试验机分会会员

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Investigation on the Material Removal and Surface Generation of a Single Crystal SiC Wafer by Ultrasonic Chemical Mechanical Polishing Combined with Ultrasonic Lapping

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论文类型：期刊论文
发表刊物： Materials
刊物所在地： (Basel, Switzerland
文献类型： J
卷号： 11
期号： 10
是否译文：否

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